CNT RF beats incumbent leader GaAs in Linearity by 10x

RF Circuit legend and textbook author, Dr. Stephen Maas has measured the the superior linearity properties of CNT and compared them to GaAs. In his recent 2017 IEEE Microwave Symposium paper he highlights:

“…CNT’s a1 / a3 ratio is greater than the pHEMT’s, showing more than an order of magnitude superiority”

“…Linearity measurements show that CNT devices have extraordinary inherent linearity, significantly greater than  that of modern microwave FETs. This result confirms earlier predictions.”

Maas, Stephen. “Linearity and dynamic range of carbon nanotube field-effect transistors.” Microwave Symposium (IMS), 2017 IEEE MTT-S International. IEEE, 2017 (PDF)